One-Volt Operation of High-Current Vertical Channel Polymer Semiconductor Field-Effect Transistors
Citation
Johnston, D.E.; Yager, K.G.; Nam, C.-Y.; Ocko, B.M.; Black, C.T. "One-Volt Operation of High-Current Vertical Channel Polymer Semiconductor Field-Effect Transistors"
Nano Letters 2012,
8 4181–4186.
doi: 10.1021/nl301759jSummary
We describe an organic field-effect transistor (FET) based on P3HT, with a vertical device geometry. This geometry enables higher areal current densities. We present device performance data and characterize the orientation of the semiconducting polymer phase.
Abstract
We realize a vertical channel polymer semiconductor field effect transistor architecture by confining the organic material within gratings of interdigitated trenches. The geometric space savings of a perpendicular channel orientation results in devices sourcing areal current densities in excess of 40 mA/cm2, using a one-volt supply voltage, and maintaining near-ideal device operating characteristics. Vertical channel transistors have a similar electronic mobility to that of planar devices using the same polymer semiconductor, consistent with a molecular reorientation within confining trenches we understand through X-ray scattering measurements.
