Strongly Correlated Alignment of Fluorinated 5,11-Bis(triethylgermylethynyl)anthradithiophene Crystallites in Solution-Processed Field-Effect Transistors
Citation
Kim, C.-H.; Hlaing, H.; Payne, M.M.; Yager, K.G.; Bonnassieux, Y.; Horowitz, G.; Anthony, J.E.; Kymissis, I. "Strongly Correlated Alignment of Fluorinated 5,11-Bis(triethylgermylethynyl)anthradithiophene Crystallites in Solution-Processed Field-Effect Transistors"
ChemPhysChem 2014,
15 2913–2916.
doi: 10.1002/cphc.201402360Summary
Crystal growth of an fluorinated organic is studied, including its implications for organic electronics.
Abstract
The crystallinity of an organic semiconductor film determines the efficiency of charge transport in electronic devices. This report presents a micro-to-nanoscale investigation on the crystal growth of fluorinated 5,11-bis(triethylgermylethynyl)anthradithiophene (diF-TEG-ADT) and its implication for the electrical behavior of organic field-effect transistors (OFETs). diF-TEG-ADT exhibits remarkable self-assembly through spin-cast preparation, with highly aligned edge-on stacking creating a fast hole-conducting channel for OFETs
